Depth-dependent anti-reflection and enhancement of luminescence from Si quantum dots-based multilayer on nano-patterned Si substrates

Optics Express

Volumn 19, Issue 4, 2011, Pages 3347-3352

  Liu, Yu ^a   Xu, Jun ^a   Sun, Hongcheng ^a   Sun, Shenghua ^a   Xu, Wei ^a   Xu, Ling ^a   Chen, Kunji ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; LIGHT; LITHOGRAPHY; LUMINESCENCE; MULTILAYERS; SILICON; SPHERES;

ANTI-REFLECTION; ETCHING DEPTH; ETCHING TIME; EXCITATION LIGHT; FLAT SUBSTRATES; LIGHT EXTRACTION; LUMINESCENCE ENHANCEMENTS; LUMINESCENCE INTENSITY; ORDER OF MAGNITUDE; PATTERNED STRUCTURE; PATTERNED SUBSTRATES; SI QUANTUM DOT; SI SUBSTRATES;

SUBSTRATES;

EID: 79951607878     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.19.003347     Document Type: Article

References (22)

1. G. G. Qin, G. Z. Ran, K. Sun, and H. J. Xu, "Light emission from nanoscale Si/Si oxide materials", J. Nanosci. Nanotechnol. 10(3), 1584-1595 (2010).
2. L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzà, and F. Priolo, "Optical gain in silicon nanocrystals", Nature 408(6811), 440-444 (2000).
3. K. Chen, X. Huang, J. Xu, and D. Feng, "Visible photoluminescence in crystallized amorphous Si:H/SiNx:H multiquantum-well structures", Appl. Phys. Lett. 61(17), 2069(1992).
4. D. Chen, Y. Liu, J. Xu, D. Wei, H. Sun, L. Xu, T. Wang, W. Li, and K. Chen, "Improved emission efficiency of electroluminescent device containing nc-Si/SiO (2) multilayers by using nano-patterned substrate", Opt. Express 18(2), 917-922 (2010).
5. J. Zhou, G. R. Chen, Y. Liu, J. Xu, T. Wang, N. Wan, Z. Y. Ma, W. Li, C. Song, and K. J. Chen, "Electroluminescent devices based on amorphous SiN/Si quantum dots/amorphous SiN sandwiched structures", Opt. Express 17(1), 156-162 (2009).
6. J. Heitmann, F. Muller, M. Zacharias, and U. Gosele, "Silicon Nanocrystals: Size Matters", Adv. Mater. (Deerfield Beach Fla.) 17(7), 795-803 (2005). (Pubitemid 40532902)
7. 2 multilayers: A promising material for the third generation of solar cell", J. Appl. Phys. 106(1), 013501(2009).
8. Y. Mochizuki, M. Fujii, S. Hayashi, T. Tsuruoka, and K. Akamatsu, "Enhancement of photoluminescence from silicon nanocrystals by metal nanostructures made by nanosphere lithography", J. Appl. Phys. 106(1), 013517(2009).
9. M. Makarova, Y. Gong, S.-L. Cheng, Y. Nishi, S. Yerci, R. Li, L. D. Negro, and J. Vuckovic, "Photonic Crystal and Plasmonic Silicon-Based Light Sources", IEEE J. Sel. Top. Quantum Electron. 16(1), 132-140 (2010).
10. B. Kim, C. Cho, J. Mun, M. Kwon, T. Park, J. S. Kim, C. C. Byeon, J. Lee, and S. Park, "Enhancement of the External Quantum Efficiency of a Silicon Quantum Dot Light-Emitting Diode by Localized Surface Plasmons", Adv. Mater. (Deerfield Beach Fla.) 20(16), 3100-3104 (2008).
11. C. O'Dwyer, M. Szachowicz, G. Visimberga, V. Lavayen, S. B. Newcomb, and C. M. Torres, "Bottom-up growth of fully transparent contact layers of indium tin oxide nanowires for light-emitting devices", Nat. Nanotechnol. 4(4), 239-244 (2009).
12. 2 Nanosphere Lithography", IEEE Electron Device Lett. 29(7), 658-660 (2008).
13. A. O. Altun, S. Jeon, J. Shim, J.-H. Jeong, D.-G. Choi, K.-D. Kim, J.-H. Choi, S.-W. Lee, E.-S. Lee, and H.-D. Park, "Corrugated organic light emitting diodes for enhanced light extraction", Org. Electron. 11(5), 711-716 (2010).
14. W. Lee, S. Wang, K. Uang, T. Chen, D. Kuo, P. Wang, and P. Wang, "Enhanced Light Output of GaN-Based Vertical-Structured Light-Emitting Diodes With Two-Step Surface Roughening Using KrF Laser and Chemical Wet Etching", IEEE Photon. Technol. Lett. 22(17), 1318-1320 (2010).
15. A. C. Tamboli, K. C. McGroddy, and E. L. Hu, "Photoelectrochemical roughening of p-GaN for light extraction from GaN/InGaN light emitting diodes", Phys. Status Solidi C 6 (S2), S807 (2009).
16. P. Lalanne, and G. M. Morris, "Antireflection behavior of silicon subwavelength periodic structures for visible light", Nanotechnology 8(2), 53-56 (1997). (Pubitemid 127587929)
17. J. Zhu, Z. Yu, G. F. Burkhard, C. M. Hsu, S. T. Connor, Y. Xu, Q. Wang, M. McGehee, S. Fan, and Y. Cui, "Optical absorption enhancement in amorphous silicon nanowire and nanocone arrays", Nano Lett. 9(1), 279-282 (2009).
18. W. Li, L. Xu, W. Zhao, P. Sun, X. Huang, and K. Chen, "Fabrication of large-scale periodic silicon nanopillar arrays for 2D nanomold using modified nanosphere lithography", Appl. Surf. Sci. 253(22), 9035-9038 (2007). (Pubitemid 47247953)
19. W. Li, J. Zhou, X. G. Zhang, J. Xu, L. Xu, W. Zhao, P. Sun, F. Song, J. Wan, and K. Chen, "Field emission from a periodic amorphous silicon pillar array fabricated by modified nanosphere lithography", Nanotechnology 19(13), 135308(2008).
20. 2 multilayers", Semicond. Sci. Technol. 23(1), 015013(2008).
21. S. Koynov, M. S. Brandt, and M. Stutzmann, "Black nonreflecting silicon surfaces for solar cells", Appl. Phys. Lett. 88(20), 203107(2006).
22. N. Wan, J. Xu, G. Chen, X. Gan, S. Guo, L. Xu, and K. Chen, "Broadband antireflection and enhanced field emission from catalyst-free grown small-sized ITO nanowires at a low temperature", Acta Mater. 58(8), 3068-3072 (2010).