Enhanced light output of GaN-based vertical-structured light-emitting diodes with two-step surface roughening using KrF laser and chemical wet etching

IEEE Photonics Technology Letters

Volumn 22, Issue 17, 2010, Pages 1318-1320

  Lee, Wei Chi ^a   Wang, Shui Jinn ^a   Uang, Kai Ming ^b   Chen, Tron Min ^b   Kuo, Der Ming ^a   Wang, Pei Ren ^a   Wang, Po Hong ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b WUFENG INSTITUTE OF TECHNOLOGY   (Taiwan)

Author keywords

GaN; laser liftoff (LLO); light output power (Lop); light emitting diodes (LEDs); surface roughening

Indexed keywords

GAN; LASER LIFTOFF (LLO); LIGHT OUTPUT POWER (LOP); LIGHT-EMITTING DIODES (LEDS); SURFACE ROUGHENING;

DIODES; EXCIMER LASERS; GALLIUM ALLOYS; GALLIUM NITRIDE; GAS LASERS; KRYPTON; LIGHT EMISSION; WET ETCHING;

LIGHT EMITTING DIODES;

EID: 77955684971     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2010.2055047     Document Type: Article

References (10)

1. S. Nakamura, M. Senoh, S. Nakahama, N. Iwasa, T. Matsushita, and T. Mukai, "Blue InGaN-based laser diodes with an emission wavelength of 450 nm," Appl. Phys. Lett., vol.76, no.1, pp. 22-24, Jan. 2000.
2. S. J. Wang, K. M. Uang, S. L. Chen, Y. C. Yang, S. C. Chang, T. M. Chen, and C. H. Chen, "Use of patterned laser liftoff process and electroplating nickel layer for the fabrication of vertical-structured GaNbased light-emitting diodes," Appl. Phys. Lett., vol.87, p. 011111-11121, 2005.
3. D. S. Wuu, W. K. Wang, W. C. Shih, R. H. Horng, C. E. Lee, W. Y. Lin, and J. S. Fang, "Enhanced output power of near-ultraviolet InGaN-GaN LEDs grown on patterned sapphire substrates," IEEE Photon. Technol. Lett., vol.17, no.2, pp. 288-290, Feb. 1, 2005.
4. C. E. Lee, Y. C. Lee, H. C. Kuo, T. C. Lu, and S. C. Wang, "Further enhancement of nitride-based near-ultraviolet vertical-injection lightemitting diodes by adopting a roughened mesh-surface," IEEE Photon. Technol. Lett., vol.20, no.10, pp. 803-805, May 15, 2008.
5. H. W. Huang, C. H. Lin, K. Y. Lee, C. C. Yu, J. K. Huang, B. D. Lee, H. C. Kuo, K. M. Leung, and S. C. Wang, "Enhanced light output power of GaN-based vertical-injection light-emitting diodes with a 12-fold photonic quasi-crystal by nano-imprint lithography," Semicond. Sci. Technol., vol.24, p. 085008, 2009.
6. M. A. Tsai, P. Yu, C. L. Chao, C. H. Chiu, H. C. Kuo, S. H. Lin, J. J. Huang, T. C. Lu, and S. C. Wang, "Efficiency enhancement and beam shaping of GaN-InGaN vertical-injection light-emitting diodes via high-aspect-ratio nanorod arrays," IEEE Photon. Technol. Lett., vol.21, no.4, pp. 257-259, Feb. 15, 2009.
7. X. A. Cao, H. Piao, J. Li, J. Y. Lin, and H. X. Jiang, "Surface chemical and electronic properties of plasma-treated n-type Al Ga N," Phys. Stat. Sol.(a), vol.204, no.10, pp. 3410-3416, 2007.
8. W. C. Lee, K. M. Uang, D. M. Kuo, J. C. Chou, T. M. Chen, H. Y. Kuo, and S. J. Wang, "Use of highly reflective ohmic contact and surface KrF laser roughening to improve light output of vertical GaN-based light-emitting diodes," in Proc. 66th Device Research Conf., 2008, University of California Santa Barbara.
9. T. Akane, K. Sugioka, K. Hammura, Y. Aoyagi, K. Midorikawa, K. Obata, K. Toyoda, and S. Nomura, "GaN ablation etching by simultaneous irradiation with F2 laser and KrF excimer laser," J. Vac. Sci. Technol. B, vol.19, no.4, pp. 1388-1391, 2001.
10. G. Sinha, K. Adhikary, and S. Chaudhuri, "Sol-gel derived phase pure a-Ga O (4.98 eV) nanocrystalline thin film and its optical properties," J. Cryst. Growth, vol.276, pp. 204-207, 2005.