Improvement of external extraction efficiency in GaN-based LEDs by SiO2 nanosphere lithography

IEEE Electron Device Letters

Volumn 29, Issue 7, 2008, Pages 658-660

  Hsieh, Min Yann ^a   Wang, Cheng Yin ^a   Chen, Liang Yi ^a   Lin, Tzu Pu ^a   Ke, Min Yung ^a   Cheng, Yun Wei ^a   Yu, Yi Cheng ^a   Chen, Cheng Pin ^a   Yeh, Dong Ming ^a   Lu, Chih Feng ^a   Huang, Chi Feng ^a   Yang, C C ^a   Huang, Jian Jang ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

Extraction efficiency; Light emitting diodes (LEDs); Nanosphere lithography

Indexed keywords

CLADDING (COATING); EXTRACTION; GALLIUM ALLOYS; GALLIUM NITRIDE; LITHOGRAPHY; ORGANIC LIGHT EMITTING DIODES (OLED); SEMICONDUCTING GALLIUM; SILICON COMPOUNDS; SPIN COATING;

EXTERNAL EXTRACTION EFFICIENCY; GAN BASED LIGHT EMITTING DIODES; NANOSPHERE LITHOGRAPHY (NSL);

LIGHT EMITTING DIODES;

EID: 47249144802     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.2000918     Document Type: Article

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