Electroluminescent devices based on amorphous SiN/Si quantum dots/amorphous SiN sandwiched structures

Optics Express

Volumn 17, Issue 1, 2009, Pages 156-162

  Zhou, J ^a   Chen, G R ^a   Liu, Y ^a   Xu, J ^a   Wang, T ^a   Wan, N ^a   Ma, Z Y ^a   Li, W ^a   Song, C ^a   Chen, K J ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; ELECTRODES; ELECTROLUMINESCENCE; ENERGY GAP; LUMINESCENCE; NANOCRYSTALS; OPTOELECTRONIC DEVICES; QUANTUM DOT LASERS; SEMICONDUCTOR QUANTUM DOTS; SILICON; SILICON NITRIDE;

AMORPHOUS SI FILMS; DEVICE PERFORMANCE; ELECTROLUMINESCENT DIODES; INJECTION CURRENTS; LASER CRYSTALLIZATION; LINEARLY PROPORTIONAL; LUMINESCENT INTENSITY; SANDWICHED STRUCTURE;

AMORPHOUS SILICON;

AMMONIA; NITROGEN; SILICON; SILICON DIOXIDE;

ARTICLE; CHEMISTRY; CRYSTALLIZATION; ELECTROCHEMISTRY; ELECTRON MICROSCOPY; LASER; LIGHT; LUMINESCENCE; METHODOLOGY; NANOTECHNOLOGY; QUANTUM THEORY; RAMAN SPECTROMETRY;

AMMONIA; CRYSTALLIZATION; ELECTROCHEMISTRY; LASERS; LIGHT; LUMINESCENCE; MICROSCOPY, ELECTRON; NANOTECHNOLOGY; NITROGEN; QUANTUM THEORY; SILICON; SILICON DIOXIDE; SPECTRUM ANALYSIS, RAMAN;

EID: 58449131326     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.17.000156     Document Type: Article

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