Enhancement of electroluminescence in p-i-n structures with nano-crystalline Si/SiO2 multilayers

Semiconductor Science and Technology

Volumn 23, Issue 1, 2008, Pages

  Chen, D Y ^a   Wei, D Y ^a   Xu, J ^a   Han, P G ^a   Wang, X ^a   Ma, Z Y ^a   Chen, K J ^a   Shi, W H ^b   Wang, Q M ^b  

^a NANJING UNIVERSITY   (China)

^b INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; MULTILAYERS; NANOCRYSTALLINE MATERIALS; PERIODIC STRUCTURES; SEMICONDUCTOR DOPING; ULTRATHIN FILMS;

LUMINESCENCE INTENSITY; LUMINESCENT LAYERS; PLASMA OXIDATION PROCESS; ROOM TEMPERATURE;

ELECTROLUMINESCENCE;

EID: 37249076485     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/23/1/015013     Document Type: Article

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