Photoelectrochemical roughening of p-GaN for light extraction from GaN/InGaN light emitting diodes

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 6, Issue SUPPL. 2, 2009, Pages

  Tamboli, Adele C ^a   McGroddy, Kelly C ^a   Hu, Evelyn L ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BROAD APPLICATION; ELECTRICAL PROPERTY; EPITAXIAL STRUCTURE; EXTRACTION EFFICIENCIES; FLIP CHIP BONDING; GAN/INGAN; HETEROSTRUCTURES; LIGHT EXTRACTION; P-TYPE GAN; PHOTOELECTROCHEMICAL ETCHING; PHOTOELECTROCHEMICALS; SELECTIVE ETCHING;

BONDING; ELECTRIC PROPERTIES; ELECTROCHEMISTRY; ETCHING; EXTRACTION; GALLIUM ALLOYS; GALLIUM NITRIDE; OPTICAL INSTRUMENTS;

LIGHT EMITTING DIODES;

EID: 79251617232     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200880752     Document Type: Article

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