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Volumn 106, Issue 1, 2009, Pages

Enhancement of photoluminescence from silicon nanocrystals by metal nanostructures made by nanosphere lithography

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION BAND; EXCITATION WAVELENGTH; INCIDENT FIELDS; METAL NANOSTRUCTURE; NANO SPHERE LITHOGRAPHY; NANO-VOIDS; NANOTRIANGLES; PHOTOLUMINESCENCE PROPERTIES; PL INTENSITY; RADIATIVE DECAY RATES; SILICON NANOCRYSTALS; SURFACE PLASMON POLARITON;

EID: 67650763460     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3159030     Document Type: Article
Times cited : (26)

References (26)
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  • 3
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    • D. Kovalev, H. Heckler, G. Polisski, and F. Koch, Phys. Status Solidi B 0370-1972 215, 871 (1999). 10.1002/(SICI)1521-3951(199910)215:2<871::AID- PSSB871>3.0.CO;2-9
    • (1999) Phys. Status Solidi B , vol.215 , pp. 871
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  • 4
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    • (2000) Phys. Rev. B , vol.62 , pp. 16820
    • Takeoka, S.1    Fujii, M.2    Hayashi, S.3
  • 11
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    • (2009) J. Appl. Phys. , vol.105 , pp. 044302
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  • 19
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    • Barnes, W.L.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.