Enhancement of the external quantum efficiency of a silicon quantum dot light-emitting diode by localized surface plasmons

Advanced Materials

Volumn 20, Issue 16, 2008, Pages 3100-3104

  Kim, Beak Hyun ^a   Cho, Chang Hee ^a   Mun, Jin Soo ^a   Kwon, Min Ki ^a   Park, Tae Young ^a   Kim, Jong Su ^a   Byeon, Clare Chisu ^a   Lee, Jongmin ^a   Park, Seong Ju ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; ELECTRIC FIELDS; ELECTROMAGNETIC FIELD MEASUREMENT; ELECTROMAGNETIC FIELDS; ELECTROMAGNETIC WAVES; LIGHT EMISSION; LIGHT EMITTING DIODES; NITRIDES; OPTICAL SWITCHES; OPTICAL TWEEZERS; OPTICAL WAVEGUIDES; PHYSICAL OPTICS; PLASMONS; QUANTUM EFFICIENCY; QUANTUM ELECTRONICS; SEMICONDUCTOR QUANTUM DOTS; SILICON; SILICON NITRIDE; SILVER; SURFACE PLASMON RESONANCE;

A-SI QD; AG PARTICLES; BIO-MOLECULES; EXTERNAL QUANTUM EFFICIENCIES; LED STRUCTURES; LIGHT-SCATTERING; LOCALIZED SURFACE PLASMONS; METAL LAYERS; METALLIC PARTICLES; NANOSTRUCTURED; QD LAYERS; RESONANT EXCITATIONS; SI SUBSTRATES; SILICON QUANTUM DOTS; ULTRAFAST SWITCHES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 54949104376     PISSN: 09359648     EISSN: None     Source Type: Journal    
DOI: 10.1002/adma.200703096     Document Type: Article

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