Molecular beam epitaxy of GaBiAs on (311) B GaAs substrates

Applied Physics Letters

Volumn 91, Issue 25, 2007, Pages

  Henini, M ^a   Ibanez J ^b   Schmidbauer, M ^c   Shafi, M ^a   Novikov, S V ^a   Turyanska, L ^a   Molina, S I ^d   Sales, D L ^d   Chisholm, M F ^e   Misiewicz, J ^f  

^a UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^b INSTITUTE OF EARTH SCIENCES JAUME ALMERA   (Spain)

^c LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

^d UNIVERSITY OF CÁDIZ   (Spain)

^e OAK RIDGE NATIONAL LABORATORY   (United States)

^f WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

EPILAYERS; IMAGING TECHNIQUES; MOLECULAR BEAM EPITAXY; STRUCTURAL PROPERTIES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

BAND-GAP ENERGIES; GABIAS ALLOY; OPTICAL TRANSMISSION SPECTROSCOPY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 37549008285     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2827181     Document Type: Article

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