Photoreflectance and photoluminescence study of annealing effects on GaAsBi layers grown by metalorganic vapor phase epitaxy

Semiconductor Science and Technology

Volumn 25, Issue 6, 2018, Pages

  Chine, Z ^a   Fitouri, H ^a   Zaied, I ^a   Rebey, A ^a   El Jani, B ^a  

^a FACULTÉ DES SCIENCES DE MONASTIR   (Tunisia)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATMOSPHERIC PRESSURE; BISMUTH COMPOUNDS; ENERGY GAP; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; PHOTOLUMINESCENCE SPECTROSCOPY; SURFACE DEFECTS; TEMPERATURE DISTRIBUTION;

ANNEALING EFFECTS; ANNEALING TEMPERATURES; BAND GAP ENERGY; LOW TEMPERATURE PHOTOLUMINESCENCE; PHOTOREFLECTANCE; PHOTOREFLECTANCE SPECTRA; SURFACE/INTERFACE; TEMPERATURE DEPENDENCE;

ATMOSPHERIC TEMPERATURE;

EID: 85040177873     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/25/6/065009     Document Type: Article

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