InGaN-Based Ultraviolet Emitting Heterostructures with Quaternary AlInGaN Barriers

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 9, Issue 5, 2003, Pages 1239-1245

  Lee, Jinhyun ^a   Eliseev, Petr G ^a,b   Osiński, Marek ^a   Lee, Dong Seung ^c   Florescu, Doru I ^c   Guo, Shiping ^c   Pophristić, Milan ^c  

^a UNIVERSITY OF NEW MEXICO   (United States)

^b LEBEDEV PHYSICAL INSTITUTE   (Russian Federation)

^c EMCORE CORPORATION   (United States)

Author keywords

AlInGaN heterostructures; Ultraviolet (UV) light emission; Wide bandgap group III nitrides

Indexed keywords

ATOMIC FORCE MICROSCOPY; CURRENT DENSITY; ELECTROLUMINESCENCE; ENERGY GAP; LATTICE CONSTANTS; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; PHOTOMULTIPLIERS; QUANTUM EFFICIENCY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; ULTRAVIOLET RADIATION; X RAY DIFFRACTION ANALYSIS;

ALINGAN HETEROSTRUCTURES; EMISSION BAND; ULTRAVIOLET (UV) LIGHT EMISSION; WIDE-BANDGAP GROUP-III NITRIDES;

HETEROJUNCTIONS;

EID: 1342324852     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2003.819509     Document Type: Conference Paper

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