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Journal of Applied Physics

Volumn 108, Issue 3, 2010, Pages

Hot electron effects on efficiency degradation in InGaN light emitting diodes and designs to mitigate them

(8) Ni, X a Li, X a Lee, J a Liu, S a Avrutin, V a Ozgur U a Morko H a Matulionis, A b

a Virginia Commonwealth University (United States)

b CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY (Lithuania)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE REGIONS; BARRIER HEIGHTS; DOUBLE HETEROSTRUCTURES; EFFICIENCY DEGRADATION; ELECTRON BLOCKING LAYER; ELECTRON INJECTORS; EXPERIMENTAL DATA; EXPERIMENTAL OBSERVATION; FIRST ORDER; GAN-BASED LASER DIODES; HIGH INJECTION; HOT ELECTRON EFFECTS; INDUCED ELECTRIC FIELDS; INDUCED FIELD; INGAN LED; JUNCTION TEMPERATURES; M-PLANE; MODEL CALCULATIONS; QUASI-BALLISTIC TRANSPORT; SAMPLE STRUCTURE;

DEGRADATION; DIODES; ELECTRIC FIELDS; ELECTRONS; EXCITONS; EXTRATERRESTRIAL ATMOSPHERES; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION; LIGHT EMITTING DIODES; POLARIZATION; THERMIONIC EMISSION;

HOT ELECTRONS;

EID: 77955899577 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3460271 Document Type: Article

Times cited : (64)

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