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Applied Physics Express

Volumn 3, Issue 2, 2010, Pages

Weak carrier/exciton localization in InGaN quantum wells for green laser diodes fabricated on semi-polar {202̄1} GaN substrates

(7) Funato, Mitsuru a Kaneta, Akio a Kawakami, Yoichi a Enya, Yohei b Nishizuka, Koji b Ueno, Masaki b Nakamura, Takao b

a KYOTO UNIVERSITY (Japan)

b SUMITOMO ELECTRIC INDUSTRIES LTD (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERISTIC ENERGY; COMPOSITIONAL HOMOGENEITY; GAN SUBSTRATE; GREEN LASER; INGAN QUANTUM WELLS; INGAN QW; TIME-RESOLVED PHOTOLUMINESCENCE;

DIODES; GALLIUM NITRIDE; QUANTUM WELL LASERS; SEMICONDUCTOR QUANTUM WELLS;

GALLIUM ALLOYS;

EID: 76949087474 PISSN: 18820778 EISSN: 18820786 Source Type: Journal
DOI: 10.1143/APEX.3.021002 Document Type: Article

Times cited : (59)

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