Electron emission from a laser ablated and laser annealed BN thin film emitter

Journal of Applied Physics

Volumn 82, Issue 10, 1997, Pages 5148-5153

  Busta, H H ^a   Pryor, R W ^b  

^a SARNOFF CORPORATION   (United States)

^b WAYNE STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BN FILMS; FOWLER-NORDHEIM BEHAVIOR; LOW CURRENTS; POLYCRYSTALLINE DIAMOND FILMS; POLYCRYSTALLINE DIAMONDS; ROOM TEMPERATURE; SAMPLE RESISTANCE;

BORON NITRIDE; DIAMOND FILMS; ELECTRON EMISSION; ANNEALING; BORON COMPOUNDS; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC RESISTANCE; ELECTRIC RESISTANCE MEASUREMENT; ELECTRON ENERGY LEVELS; LASER ABLATION; SEMICONDUCTING DIAMONDS; SEMICONDUCTOR DEVICE TESTING;

CURRENT VOLTAGE CHARACTERISTICS; THIN FILM DEVICES;

BORON NITRIDE; FOWLER-NORDHEIM RESISTANCE; POLYCRYSTALLINE DIAMOND; THIN FILM EMITTER;

EID: 0031272387     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.366318     Document Type: Article

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