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Diamond and Related Materials

Volumn 19, Issue 11, 2010, Pages 1371-1376

Effects of silicon incorporation on composition, structure and electric conductivity of cubic boron nitride thin films

(5) Ying, J a Zhang, X W a Fan, Y M a Tan, H R a Yin, Z G a

a INSTITUTE OF SEMICONDUCTORS (China)

Author keywords

Cubic boron nitride; Doping; Ion beam assisted deposition; X ray photoelectron spectroscopy

Indexed keywords

B ATOMS; BN FILMS; BORON NITRIDE THIN FILMS; CUBIC BORON NITRIDE (CBN); CUBIC PHASE; DOPED C; DOPING; ELECTRICAL MEASUREMENT; GRADUAL CHANGES; HEXAGONAL BORON NITRIDE; IN-SITU; ORDERS OF MAGNITUDE; SI ATOMS; SI CONCENTRATION; SI-N BONDS;

ATOMS; BEAM PLASMA INTERACTIONS; BORON; CUBIC BORON NITRIDE; DEPOSITION; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ELECTRIC CONDUCTIVITY MEASUREMENT; ELECTRONS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; FOURIER TRANSFORMS; ION BEAM ASSISTED DEPOSITION; ION BEAMS; ION BOMBARDMENT; IONS; PHOTOELECTRICITY; PHOTONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON; THIN FILMS; VAPOR DEPOSITION; X RAY PHOTOELECTRON SPECTROSCOPY; X RAYS;

BORON NITRIDE;

EID: 77957373807 PISSN: 09259635 EISSN: None Source Type: Journal
DOI: 10.1016/j.diamond.2010.08.004 Document Type: Article

Times cited : (14)

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