On the use of soft-decision error-correction codes in nand flash memory

IEEE Transactions on Circuits and Systems I: Regular Papers

Volumn 58, Issue 2, 2011, Pages 429-439

  Dong, Guiqiang ^a   Xie, Ningde ^b   Zhang, Tong ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b INTEL CORPORATION   (United States)

Author keywords

Cell to cell interference; low density parity check (LDPC); nand Flash; nonuniform sensing; programming; r.; reverse; soft decision error correction code (ECC)

Indexed keywords

CELLS; CODES (SYMBOLS); CYTOLOGY; ERROR CORRECTION; FORWARD ERROR CORRECTION; LUNAR SURFACE ANALYSIS; MATHEMATICAL PROGRAMMING; MEMORY ARCHITECTURE; SEMICONDUCTOR STORAGE; THRESHOLD VOLTAGE; VOLTAGE DISTRIBUTION MEASUREMENT;

CELL-TO-CELL INTERFERENCES; LOW DENSITY PARITY CHECK; NAND FLASH; NONUNIFORM SENSING; REVERSE; SOFT DECISION;

FLASH MEMORY;

EID: 79551510806     PISSN: 15498328     EISSN: None     Source Type: Journal    
DOI: 10.1109/TCSI.2010.2071990     Document Type: Article

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