Alloying effects in self-assembled InAs/InP dots

Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 1176-1179

  Brault, J ^a   Gendry, M ^a   Grenet, G ^a   Hollinger, G ^a   Desieres, Y ^a   Benyattou, T ^a  

^a INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOYING; ATOMIC FORCE MICROSCOPY; CHEMICAL REACTIONS; CRYSTAL DEFECTS; CRYSTAL LATTICES; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS;

BUFFER LAYERS; SELF-ASSEMBLED DOTS;

MOLECULAR BEAM EPITAXY;

EID: 0032676509     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00020-2     Document Type: Article

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