High-power ka-band performance of AlInN/GaN HEMT with 9.8-nm-thin barrier

IEEE Electron Device Letters

Volumn 31, Issue 1, 2010, Pages 2-4

  Crespo, A ^a   Bellot, M M ^a   Chabak, K D ^a   Gillespie, J K ^a   Jessen, G H ^a   Miller, V ^a   Trejo, M ^a   Via, G D ^a   Walker, D E ^b   Winningham, B W ^a   Smith, H E ^c   Cooper, T A ^d   Gao, X ^e   Guo, S ^e  

^a AIR FORCE RESEARCH LABORATORY   (United States)

^b Wyle Laboratories   (United States)

^c UNIVERSITY OF DAYTON RESEARCH INSTITUTE   (United States)

^d WRIGHT STATE UNIVERSITY   (United States)

^e IQE INC   (United States)

Author keywords

Aluminum indium nitride; Gallium nitride; High electron mobility transistor (HEMT); Millimeter wave transistors; Power measurement

Indexed keywords

EXTRINSIC TRANSCONDUCTANCE; GATE LENGTH; HIGH-POWER; INDIUM NITRIDE; KA BAND; METALORGANIC CHEMICAL VAPOR DEPOSITION; POWER MEASUREMENT; POWER-ADDED EFFICIENCY; RADIO FREQUENCY POWER; SOURCE-DRAIN; THIN BARRIERS;

ALUMINUM; ALUMINUM GALLIUM NITRIDE; ELECTRIC POWER MEASUREMENT; ELECTRON MOBILITY; GALLIUM ALLOYS; GALLIUM NITRIDE; INDIUM; MILLIMETER WAVE DEVICES; MILLIMETER WAVES; OHMIC CONTACTS; SEMICONDUCTING GALLIUM; SILICON CARBIDE; TRANSISTORS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 72949117866     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2034875     Document Type: Article

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