Effects of oxygen gas pressure on structural, electrical, and thermoelectric properties of (ZnO)3In2O3 thin films deposited by rf magnetron sputtering

Journal of Applied Physics

Volumn 103, Issue 11, 2008, Pages

  Orikasa, Yuki ^a   Hayashi, Naoaki ^a   Muranaka, Shigetoshi ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

MAGNETRON SPUTTERING; OXYGEN; SEMICONDUCTING ZINC COMPOUNDS; ZINC; ZINC ALLOYS; ZINC OXIDE; ZINC SULFIDE;

(PL) PROPERTIES; OXYGEN GAS PRESSURE; RF MAGNETRON SPUTTERING METHOD; ZINC INDIUM OXIDE;

OXIDE FILMS;

EID: 45149084466     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2937939     Document Type: Article

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