The influence of the SiO2 deposition condition on the ZnO thin-film transistor performance

Superlattices and Microstructures

Volumn 48, Issue 2, 2010, Pages 198-205

  Zhang, L ^a   Li, J ^a   Zhang, X W ^a   Yu, D B ^a   Lin, H P ^a   Khizar Ul Haq, ^a   Jiang, X Y ^a   Zhang, Z L ^a  

^a SHANGHAI UNIVERSITY   (China)

Author keywords

Interface properties; Oxygen partial pressure; RF magnetron sputtering; ZnO TFT

Indexed keywords

BIAS STABILITY; BOTTOM GATE; CHANNEL LAYERS; DEPOSITION CONDITIONS; FIELD-EFFECT MOBILITIES; GATE INSULATOR; GATE VOLTAGES; INTERFACE PROPERTY; ON/OFF RATIO; OXYGEN PARTIAL PRESSURE; RADIO FREQUENCY SPUTTERING; RF-MAGNETRON SPUTTERING; STAGGERED ELECTRODES; SUBTHRESHOLD SWING; THRESHOLD VOLTAGE SHIFTS; ZNO;

DIELECTRIC MATERIALS; MAGNETRON SPUTTERING; OXYGEN; POSITIVE IONS; PRESSURE EFFECTS; SEMICONDUCTING ORGANIC COMPOUNDS; SILICON COMPOUNDS; THIN FILM TRANSISTORS; THRESHOLD VOLTAGE; ZINC OXIDE;

PARTIAL PRESSURE;

EID: 77955424450     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2010.06.001     Document Type: Article

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