메뉴 건너뛰기




Volumn , Issue , 2010, Pages 247-250

Self-consistent electrothermal Monte Carlo modeling of nanowire MISFETs

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRO-THERMAL EFFECTS; EXPERIMENTAL DATA; FINITE-ELEMENT; HEAT DIFFUSION EQUATIONS; INAS; METAL INSULATORS; MONTE CARLO MODELING; MONTE CARLO SIMULATORS; MONTE CARLO TRAJECTORIES; NANO-DEVICES; SIMULATION MODEL;

EID: 78751681845     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IWCE.2010.5677970     Document Type: Conference Paper
Times cited : (3)

References (19)
  • 4
    • 62549125014 scopus 로고    scopus 로고
    • Three-dimensional Monte Carlo study of three-terminal junctions based on InGaAs/InAlAs heterostructures
    • T. Sadi, F. Dessenne, and J.-L. Thobel, "Three-dimensional Monte Carlo study of three-terminal junctions based on InGaAs/InAlAs heterostructures," J. Appl. Phys., vol. 105, no. 5, p. 053707, 2009.
    • (2009) J. Appl. Phys. , vol.105 , Issue.5 , pp. 053707
    • Sadi, T.1    Dessenne, F.2    Thobel, J.-L.3
  • 5
    • 70350705631 scopus 로고    scopus 로고
    • Analysis of the high-frequency performance of InGaAs/InAlAs nanojunctions using a three-dimensional Monte Carlo simulator
    • T. Sadi and J.-L. Thobel, "Analysis of the high-frequency performance of InGaAs/InAlAs nanojunctions using a three-dimensional Monte Carlo simulator," J. Appl. Phys., vol. 106, no. 8, p. 083709, 2009.
    • (2009) J. Appl. Phys. , vol.106 , Issue.8 , pp. 083709
    • Sadi, T.1    Thobel, J.-L.2
  • 6
    • 74349129830 scopus 로고    scopus 로고
    • Study of the high-frequency performance of III-As nanojunctions using a three-dimensional ensemble Monte Carlo model
    • T. Sadi and J.-L. Thobel, "Study of the high-frequency performance of III-As nanojunctions using a three-dimensional ensemble Monte Carlo model," J. Phys.: Conf. Ser., vol. 193, p. 012017, 2009.
    • (2009) J. Phys.: Conf. Ser. , vol.193 , pp. 012017
    • Sadi, T.1    Thobel, J.-L.2
  • 8
    • 34547779456 scopus 로고    scopus 로고
    • High transconductance MISFET with a single InAs nanowire channel
    • Aug.
    • Q.-T. Do, K. Blekker, I. Regolin, W. Prost, and F. J. Tegude, "High transconductance MISFET with a single InAs nanowire channel," IEEE Electron Device Lett., vol. 28, no. 8, pp. 682-684, Aug. 2007.
    • (2007) IEEE Electron Device Lett. , vol.28 , Issue.8 , pp. 682-684
    • Do, Q.-T.1    Blekker, K.2    Regolin, I.3    Prost, W.4    Tegude, F.J.5
  • 9
    • 71949106195 scopus 로고    scopus 로고
    • Thermal conductance of InAs nanowire composites
    • Oct.
    • A. I. Persson, Y. K. Koh, D. G. Cahill, L. Samuelson, and H. Linke, "Thermal conductance of InAs nanowire composites," Nano Letters, vol. 9, no. 12, p. 4484, Oct. 2009.
    • (2009) Nano Letters , vol.9 , Issue.12 , pp. 4484
    • Persson, A.I.1    Koh, Y.K.2    Cahill, D.G.3    Samuelson, L.4    Linke, H.5
  • 10
    • 0343193098 scopus 로고    scopus 로고
    • Process-dependent thin-film thermal conductivities for thermal CMOS MEMS
    • Mar.
    • M. von Arx, O. Paul, and H. Baltes, "Process-dependent thin-film thermal conductivities for thermal CMOS MEMS," J. of Microelectromechanical Systems, vol. 9, no. 1, p. 136, Mar. 2000.
    • (2000) J. of Microelectromechanical Systems , vol.9 , Issue.1 , pp. 136
    • Von Arx, M.1    Paul, O.2    Baltes, H.3
  • 11
    • 0001259057 scopus 로고
    • Ensemble Monte Carlo particle investigation of hot electron induced source-drain burnout characteristics of GaAs field-effect transistors
    • C. Moglestue, F. A. Buot, and W. T. Anderson, "Ensemble Monte Carlo particle investigation of hot electron induced source-drain burnout characteristics of GaAs field-effect transistors," J. Appl. Phys. vol. 78, pp. 2343-2348, 1995.
    • (1995) J. Appl. Phys. , vol.78 , pp. 2343-2348
    • Moglestue, C.1    Buot, F.A.2    Anderson, W.T.3
  • 12
    • 33746624336 scopus 로고    scopus 로고
    • Simulation of electron transport in InGaAs/AlGaAs HEMTs using an electrothermal Monte Carlo method
    • Aug.
    • T. Sadi, R. Kelsall, and N. Pilgrim, "Simulation of electron transport in InGaAs/AlGaAs HEMTs using an electrothermal Monte Carlo method," IEEE Trans. Electron Devices, vol. 53, no. 8, p. 1768-1774, Aug. 2006.
    • (2006) IEEE Trans. Electron Devices , vol.53 , Issue.8 , pp. 1768-1774
    • Sadi, T.1    Kelsall, R.2    Pilgrim, N.3
  • 13
    • 33746227768 scopus 로고    scopus 로고
    • A 3D finite element method for flexible multibody systems
    • Jun.
    • J. Gerstmayr and J. Schöberl, "A 3D finite element method for flexible multibody systems," Multibody. Syst. Dyn., vol. 15, no. 4, pp. 309-324, Jun. 2006.
    • (2006) Multibody. Syst. Dyn. , vol.15 , Issue.4 , pp. 309-324
    • Gerstmayr, J.1    Schöberl, J.2
  • 14
    • 33847673516 scopus 로고    scopus 로고
    • Electrothermal Monte Carlo simulation of submicrometer Si/SiGe MODFETs
    • Feb.
    • T. Sadi, R. W. Kelsall, and N. J. Pilgrim, "Electrothermal Monte Carlo simulation of submicrometer Si/SiGe MODFETs," IEEE Trans. Electron Devices, vol. 54, no. 2, p. 332-339, Feb. 2007.
    • (2007) IEEE Trans. Electron Devices , vol.54 , Issue.2 , pp. 332-339
    • Sadi, T.1    Kelsall, R.W.2    Pilgrim, N.J.3
  • 15
    • 77950573362 scopus 로고    scopus 로고
    • Monte Carlo study of the electrothermal phenomenon in silicon-on-insulator and silicon-germanium-on-insulator metal-oxide field-effect transistors
    • T. Sadi and R. W. Kelsall, "Monte Carlo study of the electrothermal phenomenon in silicon-on-insulator and silicon-germanium-on-insulator metal-oxide field-effect transistors," J. Appl. Phys., vol. 107, no. 6, p. 064506, 2010.
    • (2010) J. Appl. Phys. , vol.107 , Issue.6 , pp. 064506
    • Sadi, T.1    Kelsall, R.W.2
  • 16
    • 33847658089 scopus 로고    scopus 로고
    • Investigation of self-heating effects in submicrometer GaN/AlGaN HEMTs using an electrothermal Monte Carlo method
    • Dec.
    • T. Sadi, R. W. Kelsall, and N. J. Pilgrim, "Investigation of self-heating effects in submicrometer GaN/AlGaN HEMTs using an electrothermal Monte Carlo method," IEEE Trans. Electron Devices, vol. 53, no. 12, p. 2892-2900, Dec. 2006.
    • (2006) IEEE Trans. Electron Devices , vol.53 , Issue.12 , pp. 2892-2900
    • Sadi, T.1    Kelsall, R.W.2    Pilgrim, N.J.3
  • 17
    • 41949095446 scopus 로고    scopus 로고
    • Theoretical study of electron confinement in submicrometer GaN HFETs using a thermally self-consistent Monte Carlo method
    • Apr.
    • T. Sadi and R. W. Kelsall, "Theoretical study of electron confinement in submicrometer GaN HFETs using a thermally self-consistent Monte Carlo method," IEEE Trans. Electron Devices, vol. 55, no. 4, p. 945-953, Apr. 2008.
    • (2008) IEEE Trans. Electron Devices , vol.55 , Issue.4 , pp. 945-953
    • Sadi, T.1    Kelsall, R.W.2
  • 18
    • 41949120523 scopus 로고    scopus 로고
    • Hot-phonon effect on the electrothermal behavior of submicrometer III-V HEMTs
    • T. Sadi and R. W. Kelsall, "Hot-phonon effect on the electrothermal behavior of submicrometer III-V HEMTs," IEEE Electron Device Lett., vol. 28, no. 9, p. 787-789, 2007.
    • (2007) IEEE Electron Device Lett. , vol.28 , Issue.9 , pp. 787-789
    • Sadi, T.1    Kelsall, R.W.2
  • 19
    • 33749684169 scopus 로고    scopus 로고
    • Improved subthreshold slope in an InAs nanowire heterostructure field-effect transistor
    • Aug.
    • E. Lind, A. I. Persson, L. Samuelson and L.-E. Wernersson, "Improved subthreshold slope in an InAs nanowire heterostructure field-effect transistor," Nano Letters, vol. 6, no. 9, pp. 1842-1846, Aug. 2006.
    • (2006) Nano Letters , vol.6 , Issue.9 , pp. 1842-1846
    • Lind, E.1    Persson, A.I.2    Samuelson, L.3    Wernersson, L.-E.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.