Three-dimensional Monte Carlo study of three-terminal junctions based on InGaAs/InAlAs heterostructures

Journal of Applied Physics

Volumn 105, Issue 5, 2009, Pages

  Sadi, Toufik ^a   Dessenne, Fraņois ^a   Thobel, Jean Luc ^a  

^a INSTITUT D ELECTRONIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BALLISTICS; CRYSTALS; DISTILLATION; HETEROJUNCTIONS; MONTE CARLO METHODS; SYSTEMS ENGINEERING; THREE DIMENSIONAL COMPUTER GRAPHICS;

3-D SIMULATIONS; BALLISTIC TRANSPORTS; DEVICE ANALYSIS; ELECTRON TRANSPORTS; HETEROSTRUCTURES; INGAAS/INALAS; MONTE CARLO SIMULATION METHODS; MONTE CARLO STUDIES; RECTIFYING BEHAVIORS; SCHOTTKY GATES; SURFACE CHARGE EFFECTS; T-BRANCH JUNCTIONS; THREE-DIMENSIONAL (3D); THREE-TERMINAL JUNCTIONS;

THREE DIMENSIONAL;

EID: 62549125014     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3087703     Document Type: Article

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