A three-dimensional monte carlo model for the simulation of nanoelectronic devices

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields

Volumn 23, Issue 3, 2010, Pages 200-214

  Sadi, T ^a   Thobel, J L ^a  

^a INSTITUT D ELECTRONIQUE   (France)

Author keywords

Monte Carlo; Semiconductor nanodevice simulation; Three dimensional modelling

Indexed keywords

3D MODELS; 3D SIMULATIONS; HETEROSTRUCTURES; INGAAS/INALAS; MONTE CARLO; MONTE CARLO MODEL; NANO-DEVICES; NANOELECTRONIC DEVICES; SCHOTTKY GATE; SEMICONDUCTOR NANODEVICES; T-BRANCH JUNCTIONS; THREE-DIMENSIONAL (3D); TWO-DIMENSIONAL (2D) MODELS;

MONTE CARLO METHODS; NANOELECTRONICS; NANOSTRUCTURED MATERIALS; SEMICONDUCTOR JUNCTIONS; THREE DIMENSIONAL COMPUTER GRAPHICS;

THREE DIMENSIONAL;

EID: 77952326105     PISSN: 08943370     EISSN: 10991204     Source Type: Journal    
DOI: 10.1002/jnm.735     Document Type: Article

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