SCOPUS 정보 검색 플랫폼

Volumn 106, Issue 8, 2009, Pages

Analysis of the high-frequency performance of InGaAs/InAlAs nanojunctions using a three-dimensional Monte Carlo simulator

(2) Sadi, Toufik a Thobel, Jean Luc a

a INSTITUT D ELECTRONIQUE (France)

Author keywords

[No Author keywords available]

Indexed keywords

DESIGN FACTORS; ELECTRON TRANSPORT; FREQUENCY REGIMES; HETEROSTRUCTURES; HIGH FREQUENCY HF; HIGH FREQUENCY PERFORMANCE; INGAAS/INALAS; MONTE CARLO SIMULATION; MONTE CARLO SIMULATORS; NANOJUNCTIONS; SIMULATION RESULT; SURFACE CHARGE EFFECT; TERA HERTZ; TERAHERTZ FREQUENCY RANGE; THREE-TERMINAL JUNCTIONS;

CHARGED PARTICLES; MONTE CARLO METHODS; SURFACE CHARGE; THREE DIMENSIONAL;

SIMULATORS;

EID: 70350705631 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3248358 Document Type: Article

Times cited : (16)

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