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Volumn 519, Issue 7, 2011, Pages 2241-2246

Full wafer scale nanoimprint lithography for GaN-based light-emitting diodes

(8) Byeon, Kyeong Jae a Hong, Eun Ju a Park, Hyoungwon a Cho, Joong Yeon a Lee, Seong Hwan a Jhin, Junggeun b Baek, Jong Hyeob b Lee, Heon a

a Korea University (South Korea)

b Korea Photonics Technology Institute (KOPTI) (South Korea)

Author keywords

Full wafer scale; Gallium nitride; Light emitting diodes; Nanoimprint; Photonic crystal

Indexed keywords

CLADDING LAYER; DRIVING CURRENT; FLEXIBLE STAMP; GAN-BASED LIGHT-EMITTING DIODES; GREEN LIGHT; IMPRINTING PROCESS; LED DEVICE; LIGHT EXTRACTION; NANO-IMPRINT; OPTICAL OUTPUT POWER; REACTIVE ION; TOTAL INTERNAL REFLECTIONS; TWO-DIMENSIONAL PHOTONIC CRYSTALS; UV-IMPRINTING PROCESS; WAFER SCALE;

CHLORINE COMPOUNDS; DIODES; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT; LIGHT EMISSION; LIGHT EMITTING DIODES; MULTIPHOTON PROCESSES; NANOIMPRINT LITHOGRAPHY; PHOTONIC CRYSTALS; POLYVINYL CHLORIDES; REACTIVE ION ETCHING; REFRACTIVE INDEX;

ORGANIC LIGHT EMITTING DIODES (OLED);

EID: 78751645439 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2010.10.039 Document Type: Article

Times cited : (23)

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