SCOPUS 정보 검색 플랫폼

Volumn 98, Issue 7, 2005, Pages

Light-output enhancement of GaN-based light-emitting diodes by using hole-patterned transparent indium tin oxide electrodes

(5) Leem, Dong Seok a Cho, Jaehee b Sone, Cheolsoo b Park, Yongjo b Seong, Tae Yeon a,c

a Gwangju Institute of Science and Technology (GIST) (South Korea)

b Samsung Advanced Institute of Technology (SAIT) (South Korea)

c Korea University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

INDIUM TIN OXIDE (ITO); LASER HOLOGRAPHIC LITHOGRAPHY; LIGHT-OUTPUT ENHANCEMENT; POSTLITHOGRAPHY;

ELECTRIC CONTACTS; ELECTROCHEMICAL ELECTRODES; ELECTRON BEAM LITHOGRAPHY; ELECTRON HOLOGRAPHY; GALLIUM COMPOUNDS; HOLE MOBILITY; ULTRAVIOLET RADIATION;

LIGHT EMITTING DIODES;

EID: 27144466356 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.2081117 Document Type: Article

Times cited : (35)

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