InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures

Applied Physics Letters

Volumn 84, Issue 19, 2004, Pages 3885-3887

  Wierer, J J ^a   Krames, M R ^a   Epler, J E ^a   Gardner, N F ^a   Craford, M G ^a   Wendt, J R ^b   Simmons, J A ^b   Sigalas, M M ^c  

^a Philips Lumileds Lighting Company   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

^c AGILENT LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAP; PHOTONIC CRYSTAL LIGHT-EMITTING DIODES (PXLED); PHOTONIC CRYSTALS; TUNNEL JUNCTION;

CRYSTAL STRUCTURE; ELECTRICITY; HETEROJUNCTIONS; LIGHT ABSORPTION; PHOTONS; QUANTUM THEORY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; THERMAL EFFECTS;

LIGHT EMITTING DIODES;

EID: 2942544860     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1738934     Document Type: Article

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