Identification of the atomic-scale defects involved in the negative bias temperature instability in plasma-nitrided p -channel metal-oxide-silicon field-effect transistors

Journal of Applied Physics

Volumn 103, Issue 4, 2008, Pages

  Campbell, J P ^a   Lenahan, P M ^b   Krishnan, A T ^b   Krishnan, S ^b  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; ELECTRIC CURRENT MEASUREMENT; MAGNETIC RESONANCE; NITROGEN; SILICON NITRIDE; TEMPERATURE MEASUREMENT;

ATOMIC SCALE DEFECTS; DEFECT IDENTIFICATION; HYPERFINE INTERACTIONS; TEMPERATURE INSTABILITY;

FIELD EFFECT TRANSISTORS;

EID: 40149099155     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2844348     Document Type: Article

References (61)

1. M. A. Alam and S. Mahapatra, Microelectron. Reliab. MCRLAS 0026-2714 10.1016/j.microrel.2004.03.019 45, 71 (2005).
2. S. Chakravarthi, A. T. Krishnan, V. Reddy, C. F. Machala, and S. Krishnan, Proceedings of the IEEE International Reliability Physics Symposium (2004), p. 273.
3. V. Huard, M. Denais, and C. Parthasarathy, Microelectron. Reliab. MCRLAS 0026-2714 10.1016/j.microrel.2005.02.001 46, 1 (2006).
4. D. K. Schroder and J. A. Babcock, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1567461 94, 1 (2003).
5. V. Reddy, A. T. Krishnan, A. Marshall, J. Rodriguez, S. Natarajan, T. Rost, and S. Krishnan, Proceedings of the IEEE International Reliability Physics Symposium (2002), p. 248.
6. M. Denais, A. Bravaix, V. Huard, C. Parthasarathy, G. Ribes, F. Perrier, Y. Rey-Tauriac, and N. Revil, Proceedings of the IEEE International Electron Devices Meeting (2004), p. 109.
7. A. T. Krishnan, C. Chancellor, S. Chakravarthi, P. E. Nicollian, V. Reddy, A. Varghese, R. B. Khamankar, and S. Krishnan, Proceedings of the IEEE International Electron Devices Meeting (2005), p. 705.
8. M. Ershov, S. Saxena, H. Karbasi, S. Winters, S. Minehane, J. Babcock, R. Lindley, P. Clifton, M. Redford, and A. Shibkov, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1604480 83, 1647 (2003).
9. S. Rangan, N. Mielke, and E. C. C. Yeh, Proceedings of the IEEE International Electron Devices Meeting (2003), p. 341.
10. H. Reisinger, O. Blank, W. Heinrigs, A. Muhlhoff, W. Gustin, and C. Schlunder, Proceedings of the IEEE International Reliability Physics Symposium (2006), p. 448.
11. T. Grasser, W. Gos, V. Sverdlov, and B. Kaczer, Proceedings of the IEEE International Reliability Physics Symposium (2007), p. 268.
12. N. Kimizuka, K. Yamaguchi, K. Imai, T. Iizuka, C. T. Liu, R. C. Keller, and T. Horiuchi, Proceedings of the Symposium on VLSI Technology (2000), p. 92.
13. N. Kimizuka, T. Yamamoto, T. Mogami, K. Yamaguchi, K. Imai, and T. Horiuchi, Proceedings of the Symposium on VLSI Technology (1999), p. 73.
14. A. E. Islam, G. Gupta, S. Mahapatra, A. T. Krishnan, K. Ahmed, F. Nouri, A. Oates, and M. A. Alam, Proceedings of the IEEE International Electron Devices Meeting (2006), p. 329.
15. P. M. Lenahan and J. F. Conley, J. Vac. Sci. Technol. B JVTBD9 0734-211X 10.1116/1.590301 16, 2134 (1998).
16. S. Fujieda, Y. Miura, M. Saitoh, E. Hasegawa, S. Koyama, and K. Ando, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1578535 82, 3677 (2003).
17. J. P. Campbell, P. M. Lenahan, A. T. Krishnan, and S. Krishnan, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2790776 91, 133507 (2007).
18. J. P. Campbell, P. M. Lenahan, A. T. Krishnan, and S. Krishnan, Proceedings of the IEEE International Reliability Symposium (2007), p. 503.
19. J. P. Campbell, P. M. Lenahan, A. T. Krishnan, and S. Krishnan, IEEE Trans. Device Mater. Reliab. ITDMA2 1530-4388 10.1109/TDMR.2006.876598 6, 117 (2006).
20. J. P. Campbell, P. M. Lenahan, A. T. Krishnan, and S. Krishnan, Proceedings of the IEEE International Reliability Physics Symposium (2006), p. 442.
21. J. P. Campbell, P. M. Lenahan, A. T. Krishnan, and S. Krishnan, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2131197 87, 204106 (2005).
22. K. L. Brower, Z. Phys. Chem., Neue Folge ZPCFAX 0044-3336 151, 177 (1987).
23. J. W. Gabrys, P. M. Lenahan, and W. Weber, Microelectron. Eng. MIENEF 0167-9317 10.1016/0167-9317(93)90172-2 22, 273 (1993).
24. E. H. Poindexter, G. J. Gerardi, M. E. Rueckel, P. J. Caplan, N. M. Johnson, and D. K. Biegelsen, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.333819 56, 2844 (1984).
25. A. Stesmans, B. Nouwen, and V. V. Afanas'ev, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.58.15801 58, 15801 (1998).
26. J. P. Campbell and P. M. Lenahan, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1461053 80, 1945 (2002).
27. G. J. Gerardi, E. H. Poindexter, P. J. Caplan, and N. M. Johnson, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.97611 49, 348 (1986).
28. P. M. Lenahan and P. V. Dressendorfer, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.332171 54, 1457 (1983).
29. P. M. Lenahan and P. V. Dressendorfer, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.332937 55, 3495 (1984).
30. T. D. Mishima and P. M. Lenahan, IEEE Trans. Nucl. Sci. IETNAE 0018-9499 10.1109/23.903761 47, 2249 (2000).
31. T. D. Mishima, P. M. Lenahan, and W. Weber, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.126776 76, 3771 (2000).
32. K. O. Jeppson and C. M. Svensson, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.323909 48, 2004 (1977).
33. S. Ogawa and N. Shiono, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.51.4218 51, 4218 (1995).
34. D. J. Fitzgerald and A. S. Grove, Surf. Sci. SUSCAS 0039-6028 10.1016/0039-6028(68)90182-9 9, 347 (1968).
35. A. Neugroschel, C. T. Sah, K. M. Han, M. S. Carroll, T. Nishida, J. T. Kavalieros, and Y. Lu, IEEE Trans. Electron Devices IETDAI 0018-9383 10.1109/16.405281 42, 1657 (1995).
36. J. A. Weil, J. R. Bolton, and J. E. Wertz, Electron Paramagnetic Resonance: Elementary Theory and Practical Applications (Wiley, New York, NY, 1994).
37. D. J. Lepine, Phys. Rev. B PLRBAQ 0556-2805 10.1103/PhysRevB.6.436 6, 436 (1972).
38. M. A. Jupina and P. M. Lenahan, IEEE Trans. Nucl. Sci. IETNAE 0018-9499 10.1109/23.45372 36, 1800 (1989).
39. D. Kaplan, I. Solomon, and N. F. Mott, J. Phys. (Paris), Lett. JPSLBO 0302-072X 10.1051/jphyslet:0197800390405100 39, L51 (1978).
40. P. M. Lenahan and M. A. Jupina, Colloids Surf. COSUD3 0166-6622 10.1016/0166-6622(90)80023-W 45, 191 (1990).
41. Y. Miura and S. Fujieda, Jpn. J. Appl. Phys., Part 1 JAPNDE 0021-4922 10.1143/JJAP.40.2840 40, 2840 (2001).
42. J. H. Stathis, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.115900 68, 1669 (1996).
43. Y. Y. Kim and P. M. Lenahan, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.341494 64, 3551 (1988).
44. A. S. Grove and D. J. Fitzgerald, Solid-State Electron. SSELA5 0038-1101 10.1016/0038-1101(66)90118-3 9, 783 (1966).
45. P. E. Nicollian, M. Rodder, D. T. Grider, P. Chen, R. M. Wallace, and S. V. Hattangady, Proceedings of the IEEE International Reliability Physics Symposium (1999), p. 400.
46. J. H. Stathis, G. LaRosa, and A. Chou, Proceedings of the IEEE International Reliability Physics Symposium (2004), p. 1.
47. P. M. Lenahan and P. V. Dressendorfer, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.93583 41, 542 (1982).
48. E. H. Nicollian and J. R. Brews, MOS (Metal Oxide Semiconductor) Physics and Technology (Wiley, New York, 1982).
49. P. M. Lenahan and S. E. Curry, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.103278 56, 157 (1990).
50. D. L. Griscom, E. J. Friebele, and G. H. Sigel, Solid State Commun. SSCOA4 0038-1098 10.1016/0038-1098(74)91124-7 15, 479 (1974).
51. J. F. Conley, P. M. Lenahan, H. L. Evans, R. K. Lowry, and T. J. Morthorst, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.358428 76, 2872 (1994).
52. W. L. Warren and P. M. Lenahan, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.42.1773 42, 1773 (1990).
53. D. T. Krick, P. M. Lenahan, and J. Kanicki, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.341499 64, 3558 (1988).
54. V. J. Kapoor, R. S. Bailey, and H. J. Stein, J. Vac. Sci. Technol. A JVTAD6 0734-2101 10.1116/1.571966 1, 600 (1983).
55. P. A. Kraus, K. Ahmed, T. C. Chua, M. Ershov, H. Karbasi, C. S. Olsen, F. Nouri, J. Holland, R. Zhao, G. Miner, and A. Lepert, Proceedings of the Symposium on VLSI Technology (2003), p. 143.
56. T. P. Ma, J. Vac. Sci. Technol. A JVTAD6 0734-2101 10.1116/1.577714 10, 705 (1992).
57. P. J. Wright and K. C. Saraswat, IEEE Trans. Electron Devices IETDAI 0018-9383 10.1109/16.299669 36, 879 (1989).
58. T. B. Hook, E. Adler, F. Guarin, J. Lukaitis, N. Rovedo, and K. Schruefer, IEEE Trans. Electron Devices IETDAI 0018-9383 10.1109/16.930650 48, 1346 (2001).
59. C. H. Liu, M. T. Lee, C.-Y. Lin, J. Chen, K. Schruefer, J. Brighten, N. Rovedo, T. B. Hook, M. V. Khare, S.-F. Huang, C. Wann, T.-C. Chen, and T. H. Ning, Proceedings of the IEEE International Electron Devices Meeting (2001), p. 861.
60. Y. Mitani, M. Nagamine, H. Satake, and A. Toriumi, Proceedings of the IEEE International Electron Devices Meeting (2002), p. 509.
61. T. Maruizumi, J. Ushio, and M. Miyao, J. Non-Cryst. Solids JNCSBJ 0022-3093 10.1016/S0022-3093(99)00021-6 246, 73 (1999).