Observation of trapping defects in 4H -silicon carbide metal-oxide-semiconductor field-effect transistors by spin-dependent recombination

Applied Physics Letters

Volumn 86, Issue 2, 2005, Pages

  Meyer, David J ^a   Lenahan, Patrick M ^a   Lelis, Aivars J ^b  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MATHEMATICAL MODELS; MOS DEVICES; MOSFET DEVICES; PARAMAGNETIC RESONANCE; SILICA; SILICON CARBIDE; SPECTRUM ANALYSIS; TRANSISTORS;

SHOCKLEY-READ-HALL (SRH) RECOMBINATION MODEL; SPIN-DEPENDENT RECOMBINATION; TRAPPING DEFECTS; VALENCE BAND;

FIELD EFFECT TRANSISTORS;

EID: 13544276303     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1851592     Document Type: Article

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