Identification of trapping defects in 4H -silicon carbide metal-insulator-semiconductor field-effect transistors by electrically detected magnetic resonance

Applied Physics Letters

Volumn 89, Issue 22, 2006, Pages

  Dautrich, Morgen S ^a   Lenahan, Patrick M ^a   Lelis, Aivars J ^b  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; DIELECTRIC PROPERTIES; ELECTRIC VARIABLES MEASUREMENT; MAGNETIC RESONANCE; MISFET DEVICES;

DIELECTRIC INTERFACE TRAPS; ELECTRICAL MEASUREMENTS; SILICON VACANCY CENTER;

SILICON CARBIDE;

EID: 33751583639     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2388923     Document Type: Article

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