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Volumn 483-485, Issue , 2005, Pages 593-596
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Observation of deep level centers in 4H and 6H silicon carbide metal oxide semiconductor field effect transistors
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Author keywords
Deep levels; Electron spin resonance; Field effect transistors; Trapping centers
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Indexed keywords
ELECTRON TRAPS;
PARAMAGNETIC RESONANCE;
SILICA;
SILICON CARBIDE;
SPIN DEPENDENT RECOMBINATION (SDR);
TRAPPING CENTERS;
MOSFET DEVICES;
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EID: 33751571836
PISSN: 02555476
EISSN: 16629752
Source Type: Book Series
DOI: 10.4028/0-87849-963-6.593 Document Type: Conference Paper |
Times cited : (4)
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References (13)
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