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Volumn 483-485, Issue , 2005, Pages 593-596

Observation of deep level centers in 4H and 6H silicon carbide metal oxide semiconductor field effect transistors

Author keywords

Deep levels; Electron spin resonance; Field effect transistors; Trapping centers

Indexed keywords

ELECTRON TRAPS; PARAMAGNETIC RESONANCE; SILICA; SILICON CARBIDE;

EID: 33751571836     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-963-6.593     Document Type: Conference Paper
Times cited : (4)

References (13)
  • 7
    • 11644278982 scopus 로고    scopus 로고
    • P.M. Lenahan and J.F. Conley, Jr.: J. Vac. Sci. Technol. B 16 (1998), p. 2134
    • P.M. Lenahan and J.F. Conley, Jr.: J. Vac. Sci. Technol. B Vol. 16 (1998), p. 2134


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.