In-situ observation of AlN formation during nitridation of sapphire by ultrahigh vacuum transmission electron microscopy

Materials Research Society Symposium - Proceedings

Volumn 482, Issue , 1997, Pages 99-107

  Yeadon, M ^a   Marshall, M T ^a   Hamdani, F ^a   Pekin, S ^a   Morkoc, H ^a   Gibson, J M ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; ANNEALING; EPITAXIAL GROWTH; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; MORPHOLOGY; NITRIDES; SAPPHIRE; SEMICONDUCTING FILMS; SYNTHESIS (CHEMICAL); TRANSMISSION ELECTRON MICROSCOPY; VACUUM APPLICATIONS;

ALUMINUM NITRIDES; NITRIDATION; ULTRAHIGH VACUUM TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0031369086     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-482-99     Document Type: Conference Paper

References (20)