|
Volumn 509, Issue 6, 2011, Pages 3155-3159
|
Electrical and optical characteristics of Au/PbS/n-6H-SiC structures prepared by electrodeposition of PbS thin film on n-type 6H-SiC substrate
|
Author keywords
PbS; Schottky barrier modification; Silicon carbide; XRD
|
Indexed keywords
DIFFRACTION PROFILES;
ELECTRODEPOSITION METHODS;
FORWARD BIAS;
INTERFACE CHARGE;
INTERFACE LAYER;
INTERFACE STATE;
LEAD SULFIDE;
OPTICAL ABSORPTION SPECTRUM;
OPTICAL CHARACTERISTICS;
OPTICAL ENERGY BAND GAP;
PBS;
SCHOTTKY BARRIER HEIGHTS;
SCHOTTKY BARRIER MODIFICATION;
SEMICONDUCTOR CONTACTS;
SIC SCHOTTKY DIODE;
SIC SUBSTRATES;
SPACE CHARGE REGIONS;
XRD;
CRYSTAL STRUCTURE;
CURRENT VOLTAGE CHARACTERISTICS;
ELECTRODEPOSITION;
FILM PREPARATION;
LIGHT ABSORPTION;
OPTICAL MATERIALS;
SCHOTTKY BARRIER DIODES;
SEMICONDUCTOR DIODES;
SEMICONDUCTOR METAL BOUNDARIES;
SILICON CARBIDE;
THIN FILMS;
SEMICONDUCTING SILICON COMPOUNDS;
|
EID: 78651349411
PISSN: 09258388
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jallcom.2010.12.028 Document Type: Article |
Times cited : (11)
|
References (50)
|