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Volumn 509, Issue 6, 2011, Pages 3155-3159

Electrical and optical characteristics of Au/PbS/n-6H-SiC structures prepared by electrodeposition of PbS thin film on n-type 6H-SiC substrate

Author keywords

PbS; Schottky barrier modification; Silicon carbide; XRD

Indexed keywords

DIFFRACTION PROFILES; ELECTRODEPOSITION METHODS; FORWARD BIAS; INTERFACE CHARGE; INTERFACE LAYER; INTERFACE STATE; LEAD SULFIDE; OPTICAL ABSORPTION SPECTRUM; OPTICAL CHARACTERISTICS; OPTICAL ENERGY BAND GAP; PBS; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY BARRIER MODIFICATION; SEMICONDUCTOR CONTACTS; SIC SCHOTTKY DIODE; SIC SUBSTRATES; SPACE CHARGE REGIONS; XRD;

EID: 78651349411     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2010.12.028     Document Type: Article
Times cited : (11)

References (50)
  • 24
    • 84884274286 scopus 로고    scopus 로고
    • Santa Clara Univ, Santa Clara, CA, June 18-19
    • C. Luo Conf. Inf.: 17th ASME Conf. Inf. Storage and Process. Syst. Santa Clara Univ, Santa Clara, CA, June 18-19 2007 (Source: Microsyst. Technol. Micro Nanosyst. Inf. Storage Process. Syst. 15 (10-11) (2009) 1605)
    • (2007) Conf. Inf.: 17th ASME Conf. Inf. Storage and Process. Syst.
    • Luo, C.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.