Electrical properties of safranine T/p-Si organic/inorganic semiconductor devices

EPJ Applied Physics

Volumn 50, Issue 1, 2010, Pages

  Gullu, O ^a   Asubay, S ^b   Biber, M ^c   Kilicoglu T ^a,b   Turut A ^c  

^a BATMAN UNIVERSITY   (Turkey)

^b DICLE UNIVERSITY   (Turkey)

^c ATATÜRK UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

ACCEPTOR DOPING; BARRIER HEIGHTS; C-V MEASUREMENT; CAPACITANCE-VOLTAGE CHARACTERISTICS; CURRENT VOLTAGE; ELECTRICAL CHARACTERISTIC; ELECTRICAL PROPERTY; I-V AND C-V CHARACTERISTICS; I-V MEASUREMENTS; IDEALITY FACTORS; NATIVE OXIDES; ORGANIC THIN FILMS; ORGANIC/INORGANIC; ORGANIC/INORGANIC SEMICONDUCTORS; RECTIFYING BEHAVIORS; SAFRANINE T; SCHOTTKY DEVICES; SEMICONDUCTOR SUBSTRATE; SI SUBSTRATES; THIN LAYERS; TOP CONTACT;

DISTILLATION; ELECTRIC PROPERTIES; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DIODES; SMELTING; THIN FILMS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 77749344757     PISSN: 12860042     EISSN: 12860050     Source Type: Journal    
DOI: 10.1051/epjap/2010022     Document Type: Article

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