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Volumn 118, Issue 1, 2009, Pages 1-5
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Electrical properties of gallium arsenide surfaces and interfaces treated by Ru(3+) ions
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Author keywords
Barrier height; GaAs; Ru(3+); Schottky diodes
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Indexed keywords
AUGER ANALYSIS;
BARRIER HEIGHT;
BARRIER HEIGHTS;
CAPACITANCE-VOLTAGE CHARACTERISTICS;
CURRENT VOLTAGE;
ELECTRICAL MEASUREMENT;
ELECTRICAL PROPERTY;
ELECTROCHEMICAL MEASUREMENTS;
ENERGY DISTRIBUTIONS;
FORWARD BIAS;
GAAS;
GAAS SUBSTRATES;
GAAS SURFACES;
GALLIUM ARSENIDE;
IDEALITY FACTORS;
INTERFACE STATE;
INTERFACE STATES DENSITY;
IV CHARACTERISTICS;
PHOTOELECTROCHEMICALS;
RU(3+);
SATURATION CURRENT;
SCHOTTKY DIODES;
SURFACES AND INTERFACES;
ADSORPTION;
ARSENIC COMPOUNDS;
CURRENT VOLTAGE CHARACTERISTICS;
DIODES;
ELECTRIC PROPERTIES;
GALLIUM COMPOUNDS;
IONS;
SCHOTTKY BARRIER DIODES;
SEMICONDUCTING GALLIUM;
SUBSTRATES;
GALLIUM ALLOYS;
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EID: 70349970001
PISSN: 02540584
EISSN: None
Source Type: Journal
DOI: 10.1016/j.matchemphys.2009.07.036 Document Type: Review |
Times cited : (2)
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References (18)
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