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Volumn 118, Issue 1, 2009, Pages 1-5

Electrical properties of gallium arsenide surfaces and interfaces treated by Ru(3+) ions

Author keywords

Barrier height; GaAs; Ru(3+); Schottky diodes

Indexed keywords

AUGER ANALYSIS; BARRIER HEIGHT; BARRIER HEIGHTS; CAPACITANCE-VOLTAGE CHARACTERISTICS; CURRENT VOLTAGE; ELECTRICAL MEASUREMENT; ELECTRICAL PROPERTY; ELECTROCHEMICAL MEASUREMENTS; ENERGY DISTRIBUTIONS; FORWARD BIAS; GAAS; GAAS SUBSTRATES; GAAS SURFACES; GALLIUM ARSENIDE; IDEALITY FACTORS; INTERFACE STATE; INTERFACE STATES DENSITY; IV CHARACTERISTICS; PHOTOELECTROCHEMICALS; RU(3+); SATURATION CURRENT; SCHOTTKY DIODES; SURFACES AND INTERFACES;

EID: 70349970001     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchemphys.2009.07.036     Document Type: Review
Times cited : (2)

References (18)
  • 9
    • 70349913274 scopus 로고    scopus 로고
    • er Déc., 2004.
    • er Déc., 2004.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.