Study of frequency effect on the interface traps density and series resistance on Au/n-Si/CuPc/Au, heterostructure

AIP Conference Proceedings

Volumn 1017, Issue , 2008, Pages 84-88

  Saleem, M ^a   Sayyad, M H ^a   Ahmad, Zubair ^a   Karimov, Khasan S ^a,b   Shah, M ^a  

^a GIK INSTITUTE OF ENGINEERING SCIENCES AND TECHNOLOGY   (Pakistan)

^b Physical Technical Institute Dushnabe   (Tajikistan)

Author keywords

Conductance technique; Inorganic organic heterostructure; Interface traps density; Series resistance

Indexed keywords

EID: 84856975704     PISSN: 0094243X     EISSN: 15517616     Source Type: Conference Proceeding    
DOI: 10.1063/1.2940681     Document Type: Conference Paper

References (17)

1. S. Karadeniz, N. Tugluoglu, T. Serin, Appl. Surf. Sci. 233, 5 (2004).
2. S. Karadeniz, N. Tugluoglu, T. Serin, N. Serin, Appl. Surf. Sci. 246, 30 (2005).
3. A.M. Cowley, S.M. Sze., J Appl. Phys 36, 3212 (1965).
4. E.H. Nicollian, A. Goetzberger, Appl. Phys. Lett. 7, 216 (1965).
5. A. Turut, F. Koleli, J. Appl. Phys. 72, 818 (1992).
6. S.R. Forrest, M.L. Kaplan, P.H. Schmidt, W.L. Feldmann, E. Yanowski, Appl. Phys. Lett. 41, 90 (1982).
7. M. Cakar, C. Temirci, A. Turut, Chemphyschem 8, 701 (2002).
8. M.E. Aydin, T. Kihcoglu, K. Akkilic, H. Hosgoren, Physica B 381, 113 (2006).
9. A.S. Riad, A.E. El-Samahy, M. Khalil, Physica B 215, 217 (1995).
10. E.H. Nicillian, A. Goetzberger, Appl. Phys. Lett. 7, 216 (1965).
11. M. Schulz, E. Klausmann, Appl. Phys. 18, 69 (1979).
12. P. Chattopadhyay, B. Ray Chaudhuri, Solid-State Electron. 35 3 (7), 102 (1992).
13. E.H. Nicollian, J.R. Brews, MOS Physics and Technology. (Wiley, New York, 1982).
14. R.K. Sharma, P.C.H. Chan, Z. Tang, G. Yan, I.M. Hsing, J.K.O. and Sin, Sensor Actuat. B 72, 160 (2001).
15. S. Karadeniz, A. Birkan Selcuk, N. Tugluoglu, S. Bilge Ocak, Nucl. Instr. and Meth. in Phys. Res. B 259, 889 (2007).
16. W.A. Hill, C.C. Coleman, Solid State Electron. 23, 987 (1980).
17. N. Konofaos, Microelectr. J. 35, 421 (2004).