Schottky diode characteristics: Aluminium with 500 and 1000 Å thicknesses on p type WSe2 crystal

Crystal Research and Technology

Volumn 45, Issue 7, 2010, Pages 717-724

  Mathai, A J ^a   Patel, K D ^a  

^a SARDAR PATEL UNIVERSITY   (India)

Author keywords

Al pWSe2 schottky diodes; Generation recombination; Metal semiconductor interface; Thermionic emission; Tunneling

Indexed keywords

BARRIER HEIGHTS; CONDUCTION PROPERTIES; DIODE PARAMETERS; GENERATION RECOMBINATION; IDEALITY FACTORS; METAL SEMICONDUCTOR INTERFACE; METAL THICKNESS; MULTIPLE CHARGE; P-TYPE; RICHARDSON PLOT; SCHOTTKY DIODES; SEMICONDUCTING CRYSTALS; THERMIONIC EMISSION THEORY; TOTAL CURRENT; VAPOUR TRANSPORT;

ALUMINUM; CURRENT VOLTAGE CHARACTERISTICS; SCHOTTKY BARRIER DIODES; THERMIONIC EMISSION; TUNNELING (EXCAVATION);

SEMICONDUCTOR DIODES;

EID: 77954805767     PISSN: 02321300     EISSN: 15214079     Source Type: Journal    
DOI: 10.1002/crat.201000172     Document Type: Article

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