On the assumed impact of germanium doping on void formation in Czochralski-grown silicon

Journal of Applied Physics

Volumn 108, Issue 12, 2010, Pages

  Vanhellemont, Jan ^a   Zhang, Xinpeng ^a   Xu, Wubing ^a   Chen, Jiahe ^a   Ma, Xiangyang ^a   Yang, Deren ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIGINATED PARTICLES; CZOCHRALSKI; FLOW PATTERN DEFECTS; GE ATOM; GE-DOPING; GERMANIUM DOPING; HIGHER TEMPERATURES; INTERSTITIAL OXYGEN; SCANNING INFRARED MICROSCOPIES; SILICON SINGLE CRYSTALS; THERMAL EQUILIBRIUMS; VACANCY CONCENTRATION; VOID FORMATION; VOID NUCLEATION; VOID SIZE;

CRYSTAL GROWTH; DEFECT DENSITY; DEFECTS; FLOW PATTERNS; GERMANIUM; OXYGEN; VACANCIES;

SINGLE CRYSTALS;

EID: 78650920125     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3503154     Document Type: Article

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