The effect of nitrogen on void formation in Czochralski silicon crystals

Journal of Crystal Growth

Volumn 273, Issue 3-4, 2005, Pages 412-423

  Voronkov, V V ^a   Falster, R ^b  

^a MEMC Electronic Materials   (Italy)

^b MEMC Electronic Materials SpA   (Italy)

Author keywords

A1. Computer simulation; A1. Impurities; A1. Nucleation; A1. Point defects; A1. Volume defects; B2. Semiconducting silicon

Indexed keywords

COMPUTER SIMULATION; CONCENTRATION (PROCESS); CRYSTAL GROWTH FROM MELT; CRYSTALS; DISSOCIATION; IMPURITIES; INTERFACIAL ENERGY; NUCLEATION; POINT DEFECTS; SEMICONDUCTING SILICON;

DISSOCIATION RATE; INTERSTITIALS; OXYGEN IMPURITY; VOLUME DEFECTS;

NITROGEN;

EID: 10644286443     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.10.036     Document Type: Article

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