Microscopic underpinnings of defect nucleation and growth in silicon crystal growth and wafer processing

Materials Science and Engineering: B

Volumn 159-160, Issue C, 2009, Pages 128-133

  Sinno, Talid ^a   Dai, Jianguo ^a   Kapur, Sumeet S ^a  

^a UNIVERSITY OF PENNSYLVANIA   (United States)

Author keywords

Configurational entropy; Crystalline silicon; Lattice kinetic Monte Carlo; Multiscale modeling; Oxygen vacancy complexes; Point defects

Indexed keywords

AGGLOMERATION; ATOMS; CLUSTER COMPUTING; CRYSTAL ATOMIC STRUCTURE; CRYSTAL GROWTH; CRYSTAL IMPURITIES; CRYSTALLINE MATERIALS; ENTROPY; MONTE CARLO METHODS; SILICON WAFERS; SINGLE CRYSTALS; VACANCIES;

CONFIGURATIONAL ENTROPY; CRYSTAL WAFERS; CRYSTALLINE SILICONS; DEFECT GROWTH; DEFECT NUCLEATION; LATTICE KINETIC MONTE CARLO; MULTISCALE MODELING; NUCLEATION AND GROWTH; OXYGEN-VACANCY COMPLEXES; SILICON CRYSTAL GROWTH;

POINT DEFECTS;

EID: 67349164368     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2008.12.040     Document Type: Article

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