Study of surface passivation of strained indium gallium arsenide by vacuum annealing and silane treatment

Journal of Applied Physics

Volumn 104, Issue 9, 2008, Pages

  Chin, Hock Chun ^a   Wang, Benzhong ^b   Lim, Poh Chong ^b   Tang, Lei Jun ^c   Tung, Chih Hang ^c   Yeo, Yee Chia ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^c INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC COMPOUNDS; DIELECTRIC DEVICES; GALLIUM ALLOYS; GALLIUM COMPOUNDS; INDIUM ARSENIDE; MOS CAPACITORS; MOSFET DEVICES; PASSIVATION; PHOTOELECTRON SPECTROSCOPY; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM; SEMICONDUCTING SILICON COMPOUNDS; SILANES; SILICON; SURFACE TREATMENT; VACUUM; VACUUM DEPOSITION; VACUUM TECHNOLOGY; X RAY PHOTOELECTRON SPECTROSCOPY;

FREQUENCY DISPERSIONS; GATE STACK FORMATIONS; HIGH-K DIELECTRICS; INDIUM GALLIUM ARSENIDES; INTERFACE STATES; INTERFACIAL LAYERS; NATIVE OXIDES; OXIDIZED SILICONS; SEMICONDUCTOR CAPACITORS; SILANE TREATMENTS; SURFACE PASSIVATIONS; SURFACE TECHNOLOGIES; TRANSMISSION ELECTRON MICROGRAPHS; VACUUM-ANNEALING; X-RAY PHOTOELECTRON SPECTROSCOPIES;

ANNEALING;

EID: 56349150530     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3010303     Document Type: Article

References (31)

1. G. G. Fountain, R. A. Rudder, S. V. Hattangady, R. J. Markunas, and J. A. Hutchby, Tech. Dig.-Int. Electron Devices Meet. 0163-1918 10.1109/IEDM.1989. 74196 1989, 887.
2. M. Passlack, M. Hong, J. P. Mannaerts, S. N. G. Chu, R. L. Opila, and N. Moriya, Tech. Dig.-Int. Electron Devices Meet. 1995, 383.
3. F. Hasegawa, M. Onomura, C. Mogi, and Y. Nannichi, Solid-State Electron. 0038-1101 10.1016/0038-1101(88)90131-1 31, 223 (1988).
4. W. E. Spicer, Z. Liliental-Weber, E. Weber, N. Newman, T. Kendelewicz, R. Cao, C. McCants, P. Mahowald, K. Miyano, and I. Lindau, J. Vac. Sci. Technol. B 1071-1023 10.1116/1.584244 6, 1245 (1988).
5. O. F. Sankey, R. E. Allen, S. -F. Ren, and J. D. Dow, J. Vac. Sci. Technol. B 1071-1023 10.1116/1.583032 3, 1162 (1985).
6. M. Hong, J. Kwo, A. R. Mannaerts, and A. M. Sergent, Science 0036-8075 10.1126/science.283.5409.1897 283, 1897 (1999).
7. J. Kwo, D. W. Murphy, M. Hong, R. L. Opila, J. P. Mannaerts, A. M. Sergent, and R. L. Masaitis, Appl. Phys. Lett. 0003-6951 10.1063/1.124614 75, 1116 (1999).
8. K. Rajagopalan, R. Droopad, J. Abrokwah, P. Zurcher, P. Fejes, and M. Passlack, IEEE Electron Device Lett. 0741-3106 10.1109/LED.2006.889502 28, 100 (2007).
9. P. D. Ye, G. D. Wilk, B. Yang, J. Kwo, S. N. G. Chu, S. Nakahara, H. -J. L. Gossmann, J. P. Mannaerts, M. Hong, K. K. Ng, and J. Bude, Appl. Phys. Lett. 0003-6951 10.1063/1.1590743 83, 180 (2003).
10. P. D. Ye, G. D. Wilk, B. Yang, J. Kwo, H. -J. L. Gossmann, M. Hong, K. K. Ng, and J. Bude, Appl. Phys. Lett. 0003-6951 10.1063/1.1641527 84, 434 (2004).
11. Y. Xuan, H. -C. Lin, and P. D. Ye, IEEE Trans. Electron Devices 0018-9383 10.1109/TED.2007.900678 54, 1811 (2007).
12. G. K. Dalapati, Y. Tong, W. -Y. Loh, H. K. Mun, and B. J. Cho, IEEE Trans. Electron Devices 0018-9383 10.1109/TED.2007.901261 54, 1831 (2007).
13. M. M. Frank, G. D. Wilk, D. Starodub, T. Gustafsson, E. Garfunkel, Y. J. Chabal, J. Grazul, and D. A. Muller, Appl. Phys. Lett. 0003-6951 10.1063/1.1899745 86, 152904 (2005).
14. W. P. Li, X. W. Wang, Y. X. Liu, S. I. Shim, and T. P. Ma, Appl. Phys. Lett. 0003-6951 10.1063/1.2737374 90, 193503 (2007).
15. Y. Cao, X. Li, J. Zhang, P. Fay, T. H. Kosel, and D. C. Hall, IEEE Electron Device Lett. 0741-3106 10.1109/LED.2006.872898 27, 317 (2006).
16. S. Koveshnikov, W. Tsai, I. Ok, J. C. Lee, V. Torkanov, M. Yakimov, and S. Oktyabrsky, Appl. Phys. Lett. 0003-6951 10.1063/1.2164327 88, 022106 (2006).
17. I. Ok, H. Kim, M. Zhang, T. Lee, F. Zhu, L. Yu, S. Koveshnikov, W. Tsai, V. Tokranov, M. Yakimov, S. Oktyabrsky, and J. C. Lee, Tech. Dig.-Int. Electron Devices Meet. 2006, 383.
18. M. Yakimov, V. Tokranov, R. Kambhampati, S. Koveshnikov, W. Tsai, F. Zhu, J. Lee, and S. Oktyabrshy, Tech. Dig.-Int. Electron Devices Meet. 2006, 946.
19. D. Shahrjerdi, M. M. Oye, A. L. Holmes, Jr., and S. K. Banerjee, Appl. Phys. Lett. 0003-6951 10.1063/1.2234837 89, 043501 (2006).
20. H. -S. Kim, I. Ok, M. Zhang, T. Lee, F. Zhu, L. Yu, J. C. Lee, S. Koveshnikov, W. Tsai, V. Tokranov, M. Yakimov, and S. Oktyabrsky, Appl. Phys. Lett. 0003-6951 10.1063/1.2396914 89, 222904 (2006).
21. H. -S. Kim, I. Ok, M. Zhang, T. Lee, F. Zhu, L. Yu, and J. C. Lee, Appl. Phys. Lett. 0003-6951 10.1063/1.2396912 89, 222903 (2006).
22. M. Zhu, C. -H. Tung, and Y. -C. Yeo, Appl. Phys. Lett. 0003-6951 10.1063/1.2388246 89, 202903 (2006).
23. H. Zhao, H. -S. Kim, F. Zhu, M. Zhang, I. Ok, S. I. Park, J. H. Yum, and J. C. Lee, Appl. Phys. Lett. 0003-6951 10.1063/1.2795802 91, 172101 (2007).
24. F. Gao, S. J. Lee, D. Z. Chi, S. Balakumar, and D. -L. Kwong, Appl. Phys. Lett. 0003-6951 10.1063/1.2749840 90, 252904 (2007).
25. H. -C. Chin, M. Zhu, C. -H. Tung, G. S. Samudra, and Y. -C. Yeo, IEEE Electron Device Lett. 29, 553 (2008). 0741-3106
26. M. -G. Kang, S. -H. Sa, H. -H. Park, K. -S. Suh, and K. -H. Oh, Thin Solid Films 308-309, 634 (1997).
27. M. -G. Kang and H. -H. Park, Vacuum 0042-207X 10.1016/S0042-207X(02) 00202-6 67, 91 (2002).
28. J. F. Fan, H. Oigawa, and Y. Nannichi, Jpn. J. Appl. Phys., Part 2 0021-4922 10.1143/JJAP.27.L1331 27, L1331 (1988).
29. H. -L. Lu, M. Xu, S. -L. Ding, W. Chen, D. W. Zhang, and L. K. Wang, Appl. Phys. Lett. 0003-6951 10.1063/1.2370425 89, 162905 (2006).
30. W. A. Hill and C. C. Coleman, Solid-State Electron. 0038-1101 10.1016/0038-1101(80)90064-7 23, 987 (1980).
31. C. O. Chui, S. Ramanathan, B. B. Triplett, P. C. McIntyre, and K. C. Saraswat, IEEE Electron Device Lett. 0741-3106 10.1109/LED.2002.801319 23, 473 (2002).