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Applied Physics Letters

Volumn 97, Issue 22, 2010, Pages

Room temperature single-electron memory and light sensor with three-dimensionally positioned InAs quantum dots

(7) Gopfert S a Worschech, L a Lingemann, S a Schneider, C a Press, D b Hofling S a Forchel, A a

a UNIVERSITY OF WÜRZBURG (Germany)

b STANFORD UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING TECHNIQUE; GAAS/ALGAAS; HETEROSTRUCTURES; HOLE STRUCTURES; INAS; INAS QUANTUM DOTS; LIGHT SENSOR; MEMORY FUNCTIONS; MODULATION-DOPED; ROOM TEMPERATURE; SINGLE ELECTRON; SINGLE ELECTRON MEMORIES;

ELECTRONS; INDIUM ARSENIDE; SEMICONDUCTING INDIUM; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WIRES; WIRE;

SINGLE ELECTRON TRANSISTORS;

EID: 78650655216 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3520522 Document Type: Article

Times cited : (7)

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