Room-temperature operation of a memory-effect AlGaAs/GaAs heterojunction field-effect transistor with self-assembled InAs nanodots

Applied Physics Letters

Volumn 76, Issue 11, 2000, Pages 1464-1466

  Koike, K ^a   Saitoh, K ^a   Li, S ^a   Sasa, S ^a   Inoue, M ^a   Yano, M ^a  

^a OSAKA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000600589     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.126065     Document Type: Article

References (8)

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7. K. Koike, H. Ohkawa, and M. Yano, Jpn. J. Appl. Phys., Part 2 38, L417 (1999).
8. T. Mimura, S. Hiyamizu, K. Joshin, and K. Hikosaka, Jpn. J. Appl. Phys., Part 2 20, L317 (1981).