Single photon detection with a quantum dot transistor

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 40, Issue 3 B, 2001, Pages 2058-2064

  Shields, Andrew J ^a   O'Sullivan, Martin P ^a   Farrer, Ian ^a   Ritchie, David A ^b   Leadbeater, Mark L ^a   Patel, Nalin K ^a   Hogg, Richard A ^a   Norman, Carl E ^b   Curson, Neil J ^b   Pepper, Michael ^a  

^a TOSHIBA CORPORATION   (Japan)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

Field effect transistor; Photo detector; Quantum dot; Semiconductor; Single photon detector

Indexed keywords

ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; PHOTONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SENSITIVITY ANALYSIS;

QUANTUM DOT TRANSISTORS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0035267639     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.2058     Document Type: Article

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