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Applied Physics Letters

Volumn 81, Issue 11, 2002, Pages 2115-2117

Large threshold hysteresis in a narrow AlGaAs/GaAs channel with embedded quantum dots

(5) Schliemann, A a Worschech, L a Reitzenstein, S a Kaiser, S a Forchel, A a

a UNIVERSITY OF WÜRZBURG (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAAS/GAAS; CURRENT THRESHOLDS; EMBEDDED QUANTUM DOTS; ETCHING TECHNIQUE; GATE VOLTAGES; INGAAS QUANTUM DOTS; LARGE HYSTERESIS; MODULATION-DOPED; SELF-ASSEMBLED; SIDE GATE; THRESHOLD HYSTERESIS;

DRAIN CURRENT; HYSTERESIS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 79955995782 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1507607 Document Type: Article

Times cited : (27)

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