Fabrication of one-dimensional GaAs channel-coupled InAs quantum dot memory device by selective-area metal-organic vapor phase epitaxy

Applied Physics Letters

Volumn 87, Issue 19, 2005, Pages 1-3

  Nataraj, Devaraj ^a   Ooike, Noboru ^a   Motohisa, Junichi ^a   Fukui, Takashi ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON BEAM LITHOGRAPHY; ELECTRONS; ETCHING; HYSTERESIS; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; THRESHOLD VOLTAGE;

DRAIN CURRENT; MEMORY OPERATION; REAL TIME MEASUREMENTS; WIRELIKE OPENINGS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 27644433163     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2120905     Document Type: Article

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