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Applied Physics Letters

Volumn 95, Issue 10, 2009, Pages

Power gain up to gigahertz frequencies in three-terminal nanojunctions at room temperature

(6) Spanheimer, D a Muller C R a Heinrich, J a Hofling S a Worschech, L a Forchel, A a

a UNIVERSITY OF WÜRZBURG (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALTERNATING CURRENT; DIRECT CURRENT; ELECTRON RESERVOIR; GAAS/ALGAAS; GIGAHERTZ FREQUENCIES; GOLD CONTACTS; HETEROSTRUCTURES; LATERAL DIMENSION; MAXIMUM TRANSCONDUCTANCE; MODULATION-DOPED; NANOJUNCTIONS; POWER GAINS; QUANTUM CAPACITANCE; ROOM TEMPERATURE; TRANSISTOR CHARACTERISTICS; WET-CHEMICAL ETCHING;

SCATTERING PARAMETERS;

AMPLIFICATION;

EID: 70249142125 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3222941 Document Type: Article

Times cited : (10)

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