Detection and classification of single-electron jumps in Si nanocrystal memories

IEEE Transactions on Instrumentation and Measurement

Volumn 57, Issue 2, 2008, Pages 364-368

  Pace, Calogero ^a,b   Giusi, Gino ^a,b   Crupi, Felice ^a   Lombardo, Salvadore A ^b  

^a UNIVERSITY OF CALABRIA   (Italy)

^b CNR   (Italy)

Author keywords

Low noise amplifiers; Low noise bias circuits; MOSFET memory integrated circuits; Nonvolatile memories; Wafer level measurements

Indexed keywords

DRAIN CURRENT; LOW NOISE AMPLIFIERS; MOSFET DEVICES; NANOCRYSTALS; NONVOLATILE STORAGE; SEMICONDUCTING SILICON;

LOW-NOISE BIAS CIRCUITS; SINGLE-ELECTRON JUMPS; WAFER-LEVEL MEASUREMENTS;

SEMICONDUCTOR STORAGE;

EID: 39449131683     PISSN: 00189456     EISSN: None     Source Type: Journal    
DOI: 10.1109/TIM.2007.909469     Document Type: Article

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