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Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 3, Issue 11, 2006, Pages 3794-3797

Memory inhibition in quantum-wire transistors controlled by quantum dots

(3) Muller C R a Worschech, L a Forchel, A a

a UNIVERSITY OF WÜRZBURG (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

FLOATING GATE; GATE EFFICIENCY; GATE VOLTAGES; IN-PLANE; INTERNATIONAL CONFERENCES; LOW TEMPERATURES; MEMORY FUNCTIONS; QUANTUM DOTS; THRESHOLD HYSTERESIS;

BIAS VOLTAGE; CURRENT VOLTAGE CHARACTERISTICS; ELASTICITY; ELECTRIC CONDUCTIVITY; HYSTERESIS; NANOSTRUCTURED MATERIALS; OPTICAL WAVEGUIDES; QUANTUM ELECTRONICS; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR QUANTUM WIRES; TRANSISTORS; WIRE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 49549103132 PISSN: 18626351 EISSN: None Source Type: Journal
DOI: 10.1002/pssc.200671608 Document Type: Conference Paper

Times cited : (4)

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