Room temperature memory operation of a single InAs quantum dot layer in a GaAsAlGaAs heterostructure

Applied Physics Letters

Volumn 93, Issue 6, 2008, Pages

  Muller C R ^a   Worschech, L ^a   Heinrich, J ^a   Hofling S ^a   Forchel, A ^a  

^a UNIVERSITY OF WÜRZBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DATA STORAGE EQUIPMENT; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; HETEROJUNCTIONS; INDIUM ARSENIDE; OPTICAL WAVEGUIDES; QUANTUM ELECTRONICS; SEMICONDUCTING INDIUM;

CHARGE STATES; CONDUCTION BANDS; FLOATING GATE; FLOATING GATES; GATE VOLTAGES; HETERO STRUCTURES; IN-PLANE; LOCAL MINIMUMS; MEM ORY OPERATIONS; QUANTUM DOT; QUANTUM DOT LAYERS; ROOM TEMPERATURES; ROOM-TEMPERATURE; SELF-ASSEMBLED; THRESHOLD HYSTERESIS; TRANSPORT CHANNELS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 49749123927     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2967880     Document Type: Article

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